sd103aws-v-g, SD103BWS-V-G, sd103cws-v-g document number 81142 rev. 1.1, 13-may-11 vishay semiconductors www.vishay.com 1 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal schottky diodes features ? the sd103 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications ? other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems ? for general purpose applications ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-323 weight: approx. 4.0 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified note 1) valid provided that electrodes ar e kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified note 1) valid provided that electrodes ar e kept at ambient temperature ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 20145 part ordering code type marking remarks sd103aws-v-g sd103aws-v-g-18 or sd103aws-v-g-08 z6 tape and reel SD103BWS-V-G SD103BWS-V-G-18 or SD103BWS-V-G-08 z7 tape and reel sd103cws-v-g sd103cws-v-g-18 or sd103cws-v-g-08 z8 tape and reel parameter test condition part symbol value unit peak reverse voltage sd103aws-v-g v rrm 40 v SD103BWS-V-G v rrm 30 v sd103cws-v-g v rrm 20 v forward continuous current i f 350 1) ma single cycle surge 10 s square wave i fsm 2a power dissipation p tot 200 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 500 1) k/w junction temperature t j 125 c storage temperature range t stg - 55 to + 150 c
www.vishay.com 2 document number 81142 rev. 1.1, 13-may-11 sd103aws-v-g, SD103BWS-V-G, sd103cws-v-g vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test condition part symbol min. ty p. max. unit leakage current v r = 30 v sd103aws-v-g i r 5a v r = 20 v SD103BWS-V-G i r 5a v r = 10 v sd103cws-v-g i r 5a forward voltage drop i f = 20 ma v f 370 mv i f = 200 ma v f 600 mv diode capacitance v r = 0 v, f = 1 mhz c d 50 pf reverse recovery time i f = i r = 50 ma to 200 ma, recover to 0.1 i r t rr 10 ns figure 1. typical variation of forward current vs. forward voltage figure 2. typical high current forward conduction curve 1 8 4 88 0.01 1000 100 0.1 1 10 0 0.4 0.6 0. 8 1.0 0.2 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 4 8 9 4 5 3 2 0 1 0.5 1.0 01.5 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) d u ty cycle = 2 % t p = 300 ms figure 3. typical variation of reverse current at various temperatures figure 4. diode capacitance vs. reverse voltage 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 v - re v erse v oltage ( v ) i r - re v erse c u rrent ( a) r 200 8 4 75 c 50 c 25 c 100 c t am b = 125 c 1 8 491 10 20 30 40 050 c- diode capacitance (pf) d v r - re v erse v oltag e ( v ) 100 10 1
sd103aws-v-g, SD103BWS-V-G, sd103cws-v-g document number 81142 rev. 1.1, 13-may-11 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches) : sod-323 figure 5. blocking voltage derati on vs. temperature at various average forward currents t am b - am b ient temperat u re (c) 1 8 492 100 200 0 v r - re v erse v oltage ( v ) 30 10 40 20 0 50 = 400 ma i f 100 ma 200 ma foot print recommendation: rev. 5 - date: 23.sept.2009 17443 document no.:s8-v-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.10 (0.004) cathode bar 0.20 (0.008) 0.40 (0.016) 2.50 (0.098) 1.1 (0.043) 1.5 (0.059) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) 0.15 (0.006) 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) created - date: 24.august.2004 0.40 (0.016) 0.25 (0.010) 0.2 (0.008) 0 to 8
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